The contact characteristics of Al p-GaSe Schottky diode

Abstract

The Schottky barrier characteristics of Al on a Bridgman grown p-GaSe layered semiconductor have been investigated using current voltage temperature (I-V-T) characteristics over a temperature range of 198 K 373 K. The forward I-V-T data reveals decrease at the barrier height but an increase at the ideality factor with decreasing in measurement temperature. For the 300 degrees C annealed diode, the barrier height decreased from 1.04 eV to 0.6eV and the ideality increased from 1.4 to 2.4, as the temperature decreased from 37.3 K to 198 K. The Richardson plot showed activation energy of 0.26 eV at high temperature region while showed a lower energy of 0.07eV at low temperature region. (C) 2008 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.