Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Abstract

Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.