Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate

Abstract

Self-assembled In0.22Ga0.78As quantum dots (QDs) grown on Si substrate with Ge/SiGe as buffer layer grown by metal organic vapor phase epitaxy were investigated. Transmission electron microscopy and atomic force microscopy images were used to observe the size and space distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs size and density distribution was investigated. For QDs grown at 450 degrees C, the density of the In0.22Ga0.78As dots was estimated to be 1x10(11) cm(-2) and the In0.22Ga0.78As QDs thickness was 5 ML (monolayer) thick. (c) 2006 American Institute of Physics.