Design of low-voltage CMOS low-noise amplifier with image-rejection function

Abstract

A new design is presented that combines a low-noise amplifier (LNA) with an on-chip. lter instead of external. lter to eliminate image signal based on TSMC 0.18 mu m CMOS technology. The fully integrated 5.9 GHz LNA exhibits 15.2 dB gain, 3.2 dB noise figure, better than -15 dB input and output return loss, and -27 dB image rejection. The circuit operates at a supply voltage of 1 V and consumes only 6.1 mW power.