Inverse Doping Profile of MOSFETs via Geometric Programming

Abstract

In this study, we optimize one-dimensional doping profiles between the interface of semiconductor and oxide to the substrate in metal-oxide-semiconductor field-effect transistors (MOSFETs). For a set of given current-voltage curves, the problem is modelled as a geometric programming (GP) problem. The MOSFET\'s DC characteristics including the on-and off-state currents are simultaneously derived as functions of the doping profile in the GP problem.