Fabrication and characterization of amorphous In Zn-O/SiOx/n-Si heterojunction solar cells

Abstract

Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150 degrees C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10(-3) Omega cm) and high transparency (similar to 80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100 mW/cm(2) illumination (AM 1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24 V, 28.4 mA/cm(2) and 33.6%, respectively. (C) 2011 Elsevier Ltd. All rights reserved.