Effect of processing temperature on polysilicon thin-film transistors with liquid-phase deposited oxide as gate insulator

Abstract

Liquid-phase deposited (LPD) oxide has been successfully applied as gate insulator to low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). This paper assesses the feasibility of applying LPD oxide to high-temperature processed (HTP) TFTs. The high-temperature treatments like gate-oxide annealing and dopant activation provide excellent improvement in the characteristics of poly-Si TFTs with LPD gate oxides. These high-temperature treated devices show effective hydrogenation using the NH3 plasma treatment. The results imply that novel LPD gate oxide technologies can lead to replacement of thermal gate oxide with HTP poly Si TFTs. The reliability of HTP poly-Si TFTs with LPD gate oxides was also investigated.