Fast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2

Abstract

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 mu s has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.