High-Speed Electro-Absorption Modulated Laser at 1.3 mu m Wavelength Based on Selective Area Growth Technique

Abstract

We demonstrate InxAlyGa1-x-yAs based electro-absorption modulated DFB laser at 1.3 mu m wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.