Electrical characteristics of polyoxide prepared by N-2 preannealing

Abstract

This paper reports on the electrical characteristics of polyoxide with preoxidation N-2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain. (C) 1999 The Electrochemical Society. S1099-0062(99)08-054-2. All rights reserved.