Body-Tied Germanium FinFETs Directly on a Silicon Substrate

Abstract

We fabricated body-tied Ge p-channel fin field-effect transistors (p-FinFETs) directly on a Si substrate with a high-kappa/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p(+)-Ge/n-Si heterojunctions illustrates a remarkably high I-ON/I-OFF > 10(6) despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin width W-Fin of similar to 40 nm and a mask channel length L-Mask of 120 nm depict a driving current of 22 mu A/mu m at V-G = -2 V and a low OFF-current of 3 nA/mu m at V-G = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated.