Investigation on Effects of Composition on Transparent Aluminum Zinc Tin Oxide Thin-Film Transistors

Abstract

We investigated on electrical performance of amorphous Al-Zn-Sn-O thin film transistor (AZTO TFT). The mobility enhanced while the concentration of Sn increased. The improved stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion with the increase of O-2 gas flow rate.