Electrochemical etching of n-type 6H-SiC without UV illumination

Abstract

Deep etching of n-type 6H-SiC using a two-step etching process has been studied. First, anodization of 6H-SiC in an HF electrolyte (2 wt.%) without ultraviolet light is applied to form a deep porous layer with the desired dimensions. Then, a thermal oxidation process is used to oxidize this porous layer. The oxidized layer is then removed in a concentrated HF solution. In the experiments, the etching parameters electrolyte concentration and current density are optimized in order to obtain a uniform pore size and hence, a smooth etched surface. After adjusting these parameters, the porous layer formation experiments are carried out at 20 degrees C in a 2 wt.% HF electrolyte using a current density of 50 mA/cm(2). The corresponding porous layer formation rate is about 1.1 mu m/min. To demonstrate the capabilities of this SiC bulk micromachining process, deep circular cavities are fabricated in n-type 6H-SiC substrates.