Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon

Abstract

Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi(2) precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped amorphous Si. After annealing at 550A degrees C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency of amorphous Si.