Optically and electrically pumped GaN-based VCSELs

Abstract

We report the recent progress of GaN-based VCSELs with a hybrid cavity structure comprised an epitaxial AlN/GaN DBR with superlattice insertion layers, an InGaN/GaN MQW active region and a top dielectric DBR. The lasers achieved laser action under optical pumping at the room temperature with a narrow linewidth. The preliminary results of the electrically pumped VCSEL will also be presented.