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Rapid thermal chemical vapor deposition of in-situ nitrogen-doped polysilicon for dual gate CMOS

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A1995BE44J00061.pdf (188.71 KB)

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1995

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10.1109/VLSIT.1995.520887

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http://dx.doi.org/10.1109/VLSIT.1995.520887
 https://ir.lib.nycu.edu.tw/handle/11536/20049

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會議論文;;Conferences Paper

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