Room Temperature Optically Pumped 2.56-mu m Lasers With "W" Type InGaAs/GaAsSb Quantum Wells on InP Substrates

Abstract

The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density similar to 40 kW/cm(2). The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 mu m is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.