The Metal-Oxide-Semiconductor(MOS)Field-Effect Transistors

Abstract

The operation theory of MOS field-effect transistors based on some simplifying assumptions are analyzed. Then a simple method is presented to determine the effective surface carrier mobility, the parasitic resistance in the source region, and the transconductance in the saturation region. Some curves which are necessary in the method are plotted. The saturation drain current and gate voltage of these curves are normalized to the zero bias saturation drain current and pinch-off voltage respectively, thus this method is valid for different kinds of MOS transistors. The curves show that the parasitic resistance may be neglected for most of the practical MOS transistors.