整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(III)

Title:	整合MBE與MOCVD磊晶技術於三族氮化物高頻功率電晶體磊晶結構之開發(III) Development of the III-Nitride High Power High Frequency HEMT Structures Grown by Integration of MBE and MOCVD Technologies (III)
Authors:	張俊彥 CHANG CHUN-YEN 國立交通大學電子工程學系及電子研究所
Keywords:	再成長界面;氮化處理;氮化鋁鎵;分子數磊晶;Regrowth Interface;nitridation;AlGaN/GaN;MBE
Issue Date:	2010
Gov't Doc #:	NSC99-2221-E009-001
URI:	http://hdl.handle.net/11536/100763 https://www.grb.gov.tw/search/planDetail?id=2158511&docId=347364
Appears in Collections:	Research Plans