| Title: | 新世代三五族金氧半電晶體元件 III-V MOSFET for Next Generation |
| Authors: | 張翼 CHANG EDWARD YI 國立交通大學材料科學與工程學系(所) |
| Issue Date: | 2009 |
| Gov't Doc #: | NSC98-2923-E009-002-MY3 |
| URI: | http://hdl.handle.net/11536/100841 https://www.grb.gov.tw/search/planDetail?id=1817061&docId=303672 |
| Appears in Collections: | Research Plans |
- 新世代三五族金氧半電晶體元件 / 張翼;CHANG EDWARD YI
- 新世代三五族金氧半電晶體元件 / 張翼;CHANG EDWARD YI
- 下世代砷化銦鎵積體電路元件設計與特性模擬之研究 / 黃政皓;李義明;Huang, Cheng-Hao;Li, Yiming
- 奈米世代MOSFET關鍵製程技術之研發(III) / 葉清發
- Smooth Pole Tracking Technique by Power MOSFET Array in Low-Dropout Regulators / Lin, Yung-Hsin;Zheng, Kuo-Lin;Chen, Ke-Horng
- 先進砷化銦量子井金氧半場效電晶體：元件能隙工程與遲滯效應 / 林明輝;Lin, Ming-Huei;張翼;Chang, Yi
- 針對高度微縮金氧半場效電晶體的參數精確萃取方法 / 陳彥銘;Yen-Ming Chen;陳明哲;Ming-Jer Chen
- Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's / Chen, MJ;Huang, HT;Hou, CS;Yang, KN
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