| Title: | 超高真空化學氣相沈積低溫新穎複晶矽薄膜電晶體之製作與可靠度分析---子計畫II：退火製程對超高真空化學氣相沈積法成長之複晶矽薄膜結構的影響與退火複晶矽薄膜電晶體的製作 (II) Annealing Effects on UHVCVD Polysilicon Thin-Film Structure and Fabrication of Annealed Polysilicon TFT (II) |
| Authors: | 馮明憲 交通大學電子工程系 |
| Keywords: | 退火效應;薄膜電晶體;複晶矽;Annealing effect;Thin film transistor;Polysilicon |
| Issue Date: | 2000 |
| Gov't Doc #: | NSC89-2215-E009-007 |
| URI: | http://hdl.handle.net/11536/101226 https://www.grb.gov.tw/search/planDetail?id=542196&docId=99609 |
| Appears in Collections: | Research Plans |
