以氫化物氣相磊晶法開發III-V族氮化物基板( II )

Title:	以氫化物氣相磊晶法開發III-V族氮化物基板( II ) III-V Group Nitride Base Substrates Developed by Hydride Vapor Phase Epitaxy(II)
Authors:	李威儀 LEE WEI-I 國立交通大學電子物理學系(所)
Issue Date:	2008
Gov't Doc #:	NSC97-2622-E009-002
URI:	http://hdl.handle.net/11536/101884 https://www.grb.gov.tw/search/planDetail?id=1630473&docId=278550
Appears in Collections:	Research Plans

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APA	李., & LEE W. (2008). 以氫化物氣相磊晶法開發III-V族氮化物基板( II ). https://www.grb.gov.tw/search/planDetail?id=1630473&docId=278550.
Bibtex	@article{2008以氫化物氣相磊晶法開發III-V族氮化物基板(, title={以氫化物氣相磊晶法開發III-V族氮化物基板( II )}, author={李威儀 and LEE WEI-I}, journal={https://www.grb.gov.tw/search/planDetail?id=1630473&docId=278550}, year={2008}, url={https://ir.lib.nycu.edu.tw/handle/11536/101884}, }