| Title: | 具有高氮含量氮化鎢蕭特基閘極接觸之ＨＥＭＴ氮化鎵電晶體及其製造方法 |
| Authors: | 張翼 呂宗育 |
| Issue Date: | 16-Mar-2011 |
| Abstract: | 提供一種具有高氮含量氮化鎢蕭特基閘極接觸之HEMT氮化鎵電晶體，在基底上依序具有氮化鎵層、氮化鋁鎵層、蕭特基閘極以及位於閘極兩側之源極與汲極。其中蕭特基閘極的材料為氮莫耳百分比為0.5之氮化鎢。 |
| Gov't Doc #: | H01L029/778 H01L029/812 H01L021/334 |
| URI: | http://hdl.handle.net/11536/103632 |
| Patent Country: | TWN |
| Patent Number: | 201110344 |
| Appears in Collections: | Patents |
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