Title: Method of semiconductor manufacturing process
Authors: Wu YewChung Sermon
Wang Bau-Ming
Hsiao Feng-Ching
Issue Date: 9-Dec-2014
Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
Gov't Doc #: H01L021/30
H01L021/46
H01L021/02
H01L021/18
H01L033/00
URI: http://hdl.handle.net/11536/104323
Patent Country: USA
Patent Number: 08906778
Appears in Collections:Patents


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