Title: | High-side driver circuit |
Authors: | Chen Tsung-Lin Chang Edward Yi Chieng Wei-Hua Cheng Stone Jeng Shyr-Long Chang Che-Wei |
Issue Date: | 12-Nov-2013 |
Abstract: | The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source. |
Gov't Doc #: | H03B001/00 |
URI: | http://hdl.handle.net/11536/104424 |
Patent Country: | USA |
Patent Number: | 08581638 |
Appears in Collections: | Patents |
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