III-V metal-oxide-semiconductor device

Title:	III-V metal-oxide-semiconductor device
Authors:	Chang Edward Yi Lin Yueh-Chin
Issue Date:	27-Aug-2013
Abstract:	A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.
Gov't Doc #:	H01L021/02
URI:	http://hdl.handle.net/11536/104450
Patent Country:	USA
Patent Number:	08519488
Appears in Collections:	Patents

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