Cu-metalized compound semiconductor device

Title:	Cu-metalized compound semiconductor device
Authors:	Chang Edward Yi Chang Shang-Wen Lee Cheng-Shih
Issue Date:	2-Sep-2008
Abstract:	The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
Gov't Doc #:	H01L023/48 H01L029/40 H01L021/02 H01L023/52 H01L029/66
URI:	http://hdl.handle.net/11536/104763
Patent Country:	USA
Patent Number:	07420227
Appears in Collections:	Patents

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