Schottky structure in GaAs semiconductor device

Title:	Schottky structure in GaAs semiconductor device
Authors:	Lee Cheng-Shih Chang Yi
Issue Date:	7-Sep-2004
Abstract:	The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
Gov't Doc #:	H01L023/48 H01L023/52 H01L029/47 H01L029/40
URI:	http://hdl.handle.net/11536/104841
Patent Country:	USA
Patent Number:	06787910
Appears in Collections:	Patents

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