Title: METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
Authors: Wu YewChung Sermon
Chen Yu-Chung
Issue Date: 3-Jan-2013
Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
Gov't Doc #: H01L029/06
H01L021/302
H01L021/26
URI: http://hdl.handle.net/11536/105093
Patent Country: USA
Patent Number: 20130001752
Appears in Collections:Patents


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