Title: METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
Authors: Wu YewChung Sermon
Wang Bau-Ming
Hsiao Feng-Ching
Issue Date: 13-Sep-2012
Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
Gov't Doc #: H01L021/20
H01L021/26
URI: http://hdl.handle.net/11536/105133
Patent Country: USA
Patent Number: 20120231614
Appears in Collections:Patents


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