Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs

Title:	Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs
Authors:	Kuo, Yan-Fu Tai, Ya-Hsiang 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
Keywords:	UPS TFT;temperature dependence;variation;scattering mechanism
Issue Date:	1-Aug-2007
Abstract:	In recent years, low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) has been widely investigated for various applications to system-on-panel (SOP) technology. However, due to the complexity of grain boundary trap properties, the conducting behaviors of various LTPS TFTs are difficult to be analyzed systematically. In this paper, the common and device-dependent thermal effects are studied to understand the conduction mechanism in the UPS TFTs. (c) 2007 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2007.05.015 http://hdl.handle.net/11536/10525
ISSN:	0038-1101
DOI:	10.1016/j.sse.2007.05.015
Journal:	SOLID-STATE ELECTRONICS
Volume:	51
Issue:	8
Begin Page:	1092
End Page:	1095
Appears in Collections:	Articles

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