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Title: OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Authors: CHANG, Edward Yi
KUO, Chien-I
CHANG, Chun-Yen
Issue Date: 21-Apr-2011
Abstract: Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.
Gov't Doc #: H01L029/778
H01L021/335
URI: http://hdl.handle.net/11536/105312
Patent Country: USA
Patent Number: 20110089467
Appears in Collections:Patents


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