Method for forming required pattern on semiconductor substrate by thermal reflow technique

Title:	Method for forming required pattern on semiconductor substrate by thermal reflow technique
Authors:	Chang, Yi Edward Chang, Chia-Ta Hsiao, Shih-Kuang
Issue Date:	24-Jun-2010
Abstract:	The invention is disclosed that pattern on semiconductor substrate is fabricated by thermal reflow technique. Also, the pattern on semiconductor substrate having different sub-micron spacings can be fabricated by using different time for the thermal reflow technique process.
Gov't Doc #:	H01L021/3065
URI:	http://hdl.handle.net/11536/105397
Patent Country:	USA
Patent Number:	20100159708
Appears in Collections:	Patents

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.