Cu-metalized compound semiconductor device

Title:	Cu-metalized compound semiconductor device
Authors:	Chang, Edward Yi Chang, Shang-Wen Lee, Cheng-Shih
Issue Date:	28-Dec-2006
Abstract:	The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production.
Gov't Doc #:	H01L021/8238 H01L027/082
URI:	http://hdl.handle.net/11536/105677
Patent Country:	USA
Patent Number:	20060292785
Appears in Collections:	Patents

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