Title: Schottky structure in GaAs semiconductor device
Authors: Cheng-Shih, Lee
Yi, Chang
Issue Date: 29-Jan-2004
Abstract: The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.
Gov't Doc #: H01L027/095
URI: http://hdl.handle.net/11536/105781
Patent Country: USA
Patent Number: 20040016984
Appears in Collections:Patents


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