Title: 利用電漿改善金屬誘發側向結晶層特性的方法
Authors: 張志榜
吳耀銓
Issue Date: 1-Feb-2013
Abstract: 本發明提供一種利用電漿改善金屬誘發側向結晶層特性的方法,其係利用一含氟離子之電漿對此金屬誘發側向結晶層進行蝕刻,以移除金屬誘發側向結晶層上殘留的金屬成分,並使氟離子進入金屬誘發側向結晶層,進行缺陷的鈍化,以改善金屬誘發側向結晶層特性,使得後續薄膜電晶體完成後,能具有高品質與高可靠度。
Gov't Doc #: H01L021/20
URI: http://hdl.handle.net/11536/105907
Patent Country: TWN
Patent Number: I384534
Appears in Collections:Patents


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