| Title: | 半導體製程方法 |
| Authors: | 吳耀銓 陳俞中 |
| Issue Date: | 21-Jul-2014 |
| Abstract: | 本發明提供一種半導體製程方法，包含下列步驟：提供一成長基板；形成一凹凸結構於該成長基板上；形成一半導體元件層於該凹凸結構上；以及改變該成長基板與該半導體元件層的溫度。 |
| Gov't Doc #: | H01L033/22 H01L021/306 |
| URI: | http://hdl.handle.net/11536/106549 |
| Patent Country: | TWN |
| Patent Number: | I446583 |
| Appears in Collections: | Patents |
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