InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm

Title:	InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
Authors:	Huang, J. Y. Liang, H. C. Su, K. W. Lai, H. C. Chen, Y. -F. Huang, K. F. 電子物理學系 Department of Electrophysics
Issue Date:	10-Jan-2007
Abstract:	A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America.
URI:	http://dx.doi.org/10.1364/AO.46.000239 http://hdl.handle.net/11536/11233
ISSN:	0003-6935
DOI:	10.1364/AO.46.000239
Journal:	APPLIED OPTICS
Volume:	46
Issue:	2
Begin Page:	239
End Page:	242
Appears in Collections:	Articles

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