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Title: 高介電材料於導電橋式及透明電阻記憶體之轉態特性研究
Investigation on Resistive Switching Characteristics of CBRAM and T-RRAM Using High-k Materials
Authors: 張翔喻
Chang, Hsiang-Yu
曾俊元
Tseng, Tseung-Yuen
電子工程學系 電子研究所
Keywords: 電阻式記憶體;導電橋式電阻記憶體;透明電阻式記憶體;高介電材料;RRAM;CBRAM;Transparent RRAM;High-k material
Issue Date: 2015
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070250126
http://hdl.handle.net/11536/126619
Appears in Collections:Thesis


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