奈米氮化硼複合材料阻氣性能研究

Abstract

本篇論文旨在探討奈米氮化硼製備，及其高分子奈米複合材料在光電元件上阻氣性的應用，本實驗主要利用氮化硼在含N親核基(Nucleophile)或缺電子基的化合物中，實施液相超音波直接剝離法，完成奈米氮化硼的製備，且能維持穩定的分散於其中。此次實驗選用高分子化合物Polysiloxane與Polyetheramine來進行實驗設計與規劃，並且後續再經由XRD、TEM、AFM等驗證其實驗成果，在TEM及AFM結果顯示，利用液相超音波直接剝離法確實可將氮化硼剝離製備到厚度約5nm。於高分子阻氣材料上的應用，經由氣體滲透率分析儀(GPA)證實，Polysiloxane薄膜的透氣率在30℃，1Kpa，1min的條件下，可使透氣率由2301.6 cm3/m2·min·kPa達到完全阻氣，證明了氮化硼於高分子中剝離可以有效改善其材料透氣率，並且剝離程度越完全，越能有效升高分子的阻氣性能。本論文成功以液相超音波直接剝離法開發了成本低廉、易製作、可實行量產、可靠度高的阻氣材料。

In this dissertation, the preparation of boron nitride nanosheets and the application of boron nitride nanosheet composites as gas barrier materials in optoelectronic devices will be discussed. Boron nitride nanosheets are prepared by ultrasonic direct liquid stripping method of boron nitride in nitrogen-containing nucleophile or electron deficient polymers, and the nanosheets are dispersed. Polysiloxane and polyetheramine are chosen polymers for this study, and XRD, TEM and AFM results are analyzed. The results of TEM and AFM show the thickness of boron nitride nanosheets are about 5 nm through ultrasonic direct liquid stripping process. At the condition of 30℃, 1Kpa and 1min, GPA (Gas Permeation Analyzer) results show the permeability of polysiloxane film reach fully gas barrier from 2301.6 cm3/m2·min·kPa. It proves that more exfoliation of boron nitride in polymers and better gas barrier characteristic of the polymer have. Lower cost, easier preparation, able to mass production and higher stability gas barrier materials has successfully developed through ultrasonic direct liquid stripping method in this dissertation.