Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM

doi:10.1016/j.mee.2015.04.091

Title:	Nanoscale potential fluctuation in non-stoichiometric HfOx and low resistive transport in RRAM
Authors:	Kruchinin, V. N. Aliev, V. Sh. PerevaIov, T. V. Islamov, D. R. Gritsenko, V. A. Prosvirin, I. P. Cheng, C. H. Chin, A. 交大名義發表 National Chiao Tung University
Keywords:	Nanoscale fluctuations;Hafnium sub-oxides;Percolation;Resistive memory
Issue Date:	1-Nov-2015
Abstract:	We study the structure of non-stoichiometric HfOx films with variable composition using the methods of X-ray photoelectron spectroscopy and spectroscopic ellipsometry. HfOx, to a first approximation, is a mixture of HfO2 and Hf metal with a small amount (similar to 10-15%) of hafnium sub-oxides HfOy (y < 2). Spatial potential fluctuations, due to chemical compound fluctuations, lead to the percolation charge transport in such electronic systems. An application of these phenomena in resistive memory physics is discussed. (C) 2015 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.mee.2015.04.091 http://hdl.handle.net/11536/128214
ISSN:	0167-9317
DOI:	10.1016/j.mee.2015.04.091
Journal:	MICROELECTRONIC ENGINEERING
Volume:	147
Begin Page:	165
End Page:	167
Appears in Collections:	Articles