Title: 電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬
New Failure Modes, Statistical Characterization and 3D Reliability Physics Simulation in RRAM Array
Authors: 汪大暉
WANG TAHUI
國立交通大學電子工程學系及電子研究所
Issue Date: 2015
Gov't Doc #: MOST104-2221-E009-053-MY3
URI: http://hdl.handle.net/11536/129845
https://www.grb.gov.tw/search/planDetail?id=11580182&docId=471079
Appears in Collections:Research Plans