| Title: | 電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬 New Failure Modes, Statistical Characterization and 3D Reliability Physics Simulation in RRAM Array |
| Authors: | 汪大暉 WANG TAHUI 國立交通大學電子工程學系及電子研究所 |
| Issue Date: | 2016 |
| Gov't Doc #: | MOST104-2221-E009-053-MY3 |
| URI: | http://hdl.handle.net/11536/131000 https://www.grb.gov.tw/search/planDetail?id=11726875&docId=480868 |
| Appears in Collections: | Research Plans |
