非揮發性金屬橋梁式電阻式記憶體之研發

Title:	非揮發性金屬橋梁式電阻式記憶體之研發 Research and Development of Nonvolatile Conducting-Bridge Resistive Switching Memory (Cbram)
Authors:	曾俊元國立交通大學電子工程學系及電子研究所
Keywords:	;
Issue Date:	2016
Abstract:
Gov't Doc #:	MOST105-2221-E009-143-MY3
URI:	https://www.grb.gov.tw/search/planDetail?id=11886505&docId=487398 http://hdl.handle.net/11536/131851
Appears in Collections:	Research Plans