電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬

Title:	電荷擷取式3D NAND快閃記憶體可靠性量測及氮化矽內儲存電荷傳輸模擬 3d V-Nand Reliability Characterization and Sin Charge Transport Simulation
Authors:	汪大暉國立交通大學電子工程學系及電子研究所
Keywords:	;
Issue Date:	2016
Abstract:
Gov't Doc #:	MOST105-2221-E009-128-MY3
URI:	https://www.grb.gov.tw/search/planDetail?id=11896852&docId=490322 http://hdl.handle.net/11536/131933
Appears in Collections:	Research Plans