A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel

Title:	A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel
Authors:	Lin, HC Lee, MH Su, CJ Huang, TY Lee, CC Yang, YS 生物科技學系電子工程學系及電子研究所 Department of Biological Science and Technology Department of Electronics Engineering and Institute of Electronics
Keywords:	nanowires;poly-Si;sensor device;thin-film transistors (TFTs)
Issue Date:	1-Sep-2005
Abstract:	A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.
URI:	http://dx.doi.org/10.1109/LED.2005.853669 http://hdl.handle.net/11536/13323
ISSN:	0741-3106
DOI:	10.1109/LED.2005.853669
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	26
Issue:	9
Begin Page:	643
End Page:	645
Appears in Collections:	Articles

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