Microwave Annealing

doi:10.1063/1.4766505

Title:	Microwave Annealing
Authors:	Lee, Yao-Jen Cho, T. -C. Chuang, S. -S. Hsueh, F. -K. Lu, Y. -L. Sung, J. Chen, S. -J. Lo, C. -H. Lai, C. -H. Current, Michael I. Tseng, T. -Y. Chao, T. -S. Yang, F. -L. 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
Keywords:	microwave;MWA;low temperature;SPEG;dopant activation
Issue Date:	2012
Abstract:	Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, P-31, and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 degrees C.
URI:	http://dx.doi.org/10.1063/1.4766505 http://hdl.handle.net/11536/135485
ISBN:	978-0-7354-1109-8
ISSN:	0094-243X
DOI:	10.1063/1.4766505
Journal:	ION IMPLANTATION TECHNOLOGY 2012
Volume:	1496
Begin Page:	123
End Page:	128
Appears in Collections:	Conferences Paper