Transportation model establishment of InGaZnO for thin film transistor device application

Title:	Transportation model establishment of InGaZnO for thin film transistor device application
Authors:	Teng, Li-Feng Liu, Po-Tsun Chou, Yi-Teh Fan, Yang-Shun 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
Issue Date:	2010
Abstract:	The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased loll and large Vth shifts, while N-2 and O-2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.
URI:	http://hdl.handle.net/11536/135583
ISSN:	1883-2490
Journal:	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
Begin Page:	1845
End Page:	1847
Appears in Collections:	Conferences Paper