Carrier Dynamics in InAs/GaAs Quantum Rings

doi:10.1166/jcp.2009.1060

Title:	Carrier Dynamics in InAs/GaAs Quantum Rings
Authors:	Lin, C. H. Ling, H. S. Sun, K. W. Lee, C. P. Lin, S. D. Liu, Y. K. Yang, M. D. Shen, J. L. 應用化學系 Department of Applied Chemistry
Keywords:	Time-Resolved Photoluminescence;Quantum Rings;Quantum Dots
Issue Date:	2009
Abstract:	We have investigated the temperature dependence of the carrier relaxation dynamics in InAs/GaAs self-assembled quantum rings by using the time-resolved photoluminescence technique with a time resolution of similar to 250 ps. The carrier relaxation in the QRs not only shows strong dependence on the lattice temperature, it is also significant slower than the carrier relaxation in the quantum dots at temperature above 150 K.
URI:	http://hdl.handle.net/11536/13601 http://dx.doi.org/10.1166/jcp.2009.1060
ISSN:	1937-6456
DOI:	10.1166/jcp.2009.1060
Journal:	JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NOS 2 AND 3
Volume:	1
Issue:	2-3
Begin Page:	100
End Page:	102
Appears in Collections:	Conferences Paper