Title: Stability of InGaZnO Thin-Film Transistors with Durimide Passivation
Authors: Shie, Bo-Shiuan
Chang, Chih-Bin
Chang, Hao-Chun
Lin, Horng-Chih
Huang, Tiao-Yuan
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2015
Abstract: In this work, we investigate the effectiveness of three organic and inorganic materials as the passivation layers in improving the stability of the a-IGZO devices. Two types of organic materials, FH6400 and Durimide 115A, and inorganic PECVD-SiOX were explored in this work. Because of the effective protection from the diffusion of the gas molecules, especially the oxygen molecules, to the active layer, a-IGZO TFTs with the capping of organic passivation layer show good stability under positive bias stress and also show better stability under light illumination with negative bias stress due to low hydrogen content.
URI: http://hdl.handle.net/11536/136104
ISBN: 978-1-4799-9928-6
ISSN: 1946-1550
Journal: PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
Begin Page: 370
End Page: 373
Appears in Collections:Conferences Paper